| 发明名称 |
METHOD OF TESTING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, the cell structure having a main current flowing therethrough, the termination structure surrounding the cell structure, the method includes a first test step of testing dielectric strength of the semiconductor device, a charge removal step of, after the first test step, removing charge from a top surface layer of the termination structure, the top surface layer being located on the substrate and formed of an insulating film or a semi-insulating film, and a second test step of, after the charge removal step, testing dielectric strength of the semiconductor device. |
| 申请公布号 |
US2014363906(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414242016 |
申请日期 |
2014.04.01 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
OTSUKI Eiko;YOSHIURA Yasuhiro;SADAMATSU Koji |
| 分类号 |
G01R31/26;H01L21/66;G01R1/067 |
主分类号 |
G01R31/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of testing a semiconductor device having a substrate in and on which a cell structure and a termination structure are formed, said cell structure having a main current flowing therethrough, said termination structure surrounding said cell structure, said method comprising:
a first test step of testing dielectric strength of said semiconductor device; a charge removal step of, after said first test step, removing charge from a top surface layer of said termination structure, said top surface layer being located on said substrate and formed of an insulating film or a semi-insulating film; and a second test step of, after said charge removal step, testing dielectric strength of said semiconductor device. |
| 地址 |
Tokyo JP |
