SOLID-STATE IMAGE PICKUP DEVICE

摘要

A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

主权项

1. An image pickup device comprising:
a photoelectric conversion portion configured to generate a charge in accordance with incident light; a charge holding portion including a first semiconductor region of a first conductivity type configured to hold a charge generated by the photoelectric conversion portion; a floating diffusion region of the first conductivity type; a first transfer gate electrode provided on a region between the photoelectric conversion portion and the first semiconductor region; a second transfer gate electrode provided on a region between the first semiconductor region and the floating diffusion region; and a second semiconductor region provided under the first semiconductor region.