发明名称 |
SEMICONDUCTOR PROCESS |
摘要 |
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and a gate structure partially overlapping the fin-shaped structure is formed. Subsequently, a dielectric layer is blanketly formed on the substrate, and a part of the dielectric layer is removed to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure. Furthermore, the second spacer and a part of the fin-shaped structure are removed to form at least a recess at a side of the gate structure, and an epitaxial layer is formed in the recess. |
申请公布号 |
US2014363935(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201313912218 |
申请日期 |
2013.06.07 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Fu Ssu-I;Chen Cheng-Guo;Hung Yu-Hsiang;Chang Chung-Fu;Lin Chien-Ting |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor process, comprising:
providing a substrate; forming at least a fin-shaped structure in the substrate; forming a gate structure partially overlapping the fin-shaped structure; blanketly forming a dielectric layer on the substrate; removing a part of the dielectric layer to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure; removing the second spacer and a part of the fin-shaped structure to form at least a recess at a side of the gate structure; and forming an epitaxial layer in the recess. |
地址 |
Hsin-Chu City TW |