SEMICONDUCTOR PRECURSOR STRUCTURE, CIGS SEMICONDUCTOR STRUCTURE PRODUCED BY USE THEREOF, CIGS SOLAR BATTERY ARRANGED BY USE THEREOF, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide: a semiconductor precursor structure by which a CIGS semiconductor structure including a CIGS semiconductor film having a grated band gap structure and preferentially oriented to (220/204) plane can be formed by heating for a short time; a CIGS semiconductor structure obtained thereby; a CIGS solar battery arranged by use thereof; and a manufacturing method thereof.SOLUTION: A semiconductor precursor structure α comprises: a support member 1; a backside electrode 2; and a semiconductor precursor film 3. The semiconductor precursor film 3 is formed by stacking a layer C including copper and selenium on a layer including at least one combination of a layer A including Ga and Se, and a layer B including In and Se. The semiconductor precursor film 3 has a first peak P1 in a range of diffraction angles 2&thetas; of 24-29°, and a second peak P2 in a range of 42-47° in an X-ray diffraction diagram according to 2&thetas;-&thetas; method; their peak intensity ratio (P2/P1) is 0.5-5.