发明名称 半導体圧力センサおよび半導体圧力センサの製造方法
摘要 A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.
申请公布号 JP5639985(B2) 申请公布日期 2014.12.10
申请号 JP20110237485 申请日期 2011.10.28
申请人 发明人
分类号 G01L9/00;H01L29/84 主分类号 G01L9/00
代理机构 代理人
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