TRENCH GATE NITRIDE TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A normally off type nitride transistor according to the present invention includes a source electrode and a drain electrode; a channel forming laminate which includes a nucleation layer and a high resistance nitride semiconductor layer which is grown on the nucleation layer by an epitaxial lateral overgrowth; a switch semiconductor layer which is formed on the channel forming laminate and includes a structure with a partial hollow region; and a gate electrode which is located on the structure with the partial hollow region. The nucleation layer is located on the lower region of the gate electrode. Thereby, the TD density of a region except the lower region of the gate electrode on the high resistance nitride semiconductor layer grown by the epitaxial lateral overgrowth is low.