发明名称 半導体層の製造方法および光電変換装置の製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To further improve photoelectric conversion efficiency of a photoelectric conversion device. <P>SOLUTION: A method for manufacturing a semiconductor layer comprises the steps of: preparing a first compound containing a first chalcogen element-containing organic compound, a Lewis base, a group I-B element, and a first group III-B element; preparing a second compound containing a second chalcogen element-containing organic compound, a second group III-B element, and ammonium ions; producing a semiconductor layer forming solution containing the first compound, the second compound, and an organic solvent; and forming a semiconductor layer containing a group I-III-VI compound using the semiconductor layer forming solution. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5638470(B2) 申请公布日期 2014.12.10
申请号 JP20110129930 申请日期 2011.06.10
申请人 发明人
分类号 H01L31/18;H01L31/0749 主分类号 H01L31/18
代理机构 代理人
主权项
地址