LED HAVING TRANSPARENT ELECTRODE STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed are a light emitting diode including a transparent electrode structure and a manufacturing method thereof. The light emitting diode includes a GaN compound semiconductor layer, a conductive transparent oxide layer which is located on the compound semiconductor layer, and a tunnel junction layer which is located between the compound semiconductor layer and the conductive transparent oxide layer. A contact resistance is reduced on an interface between the compound semiconductor layer and the conductive transparent oxide layer by easily injecting a carrier through the tunnel junction layer.