发明名称 |
Gas mixture method for generating ion beam |
摘要 |
A gas mixture method for generating an ion beam is provided here. By dynamically tuning the mixture ratio of the gas mixture, lifetime of the ion source of an ion implanter can be prolonged. Accordingly, quality of ion beam can be maintained and maintenance fee is reduced. |
申请公布号 |
US8907301(B1) |
申请公布日期 |
2014.12.09 |
申请号 |
US201314017451 |
申请日期 |
2013.09.04 |
申请人 |
Advanced Ion Beam Technology, Inc. |
发明人 |
Hu Koulin;Wan Zhimin;Lin Wei-Cheng |
分类号 |
H01J27/00;H01J27/02 |
主分类号 |
H01J27/00 |
代理机构 |
Rosenberg, Klein & Lee |
代理人 |
Rosenberg, Klein & Lee |
主权项 |
1. A gas mixture method for generating an ion beam comprising:
supplying a dopant gas into an ion source chamber of an ion source, wherein the dopant gas is selected from CO2 and CO for generating carbon-containing ions; supplying a minor gas into the ion source chamber to dilute the dopant gas, wherein the minor gas at least comprises CF4; providing a gas mixture of the dopant gas and the minor gas in the ion source chamber to generate the ion beam; and adjusting a mixture ratio of the gas mixture dynamically when generating the ion beam, wherein the mixture ratio is volume ratio and at least the mixture ratio of CF4 is adjusted. |
地址 |
Hsinchu TW |