发明名称 |
Semiconductor device with self-aligned interconnects |
摘要 |
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant. |
申请公布号 |
US8906767(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201314106100 |
申请日期 |
2013.12.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chih Yue-Der;Lee Jam-Wem;Kuo Cheng-Hsiung;Tsai Tsung-Che;Song Ming-Hsiang;Sung Hung-Cheng;Wang Hung Cho |
分类号 |
H01L21/8234;H01L21/8238;H01L29/423;H01L29/36 |
主分类号 |
H01L21/8234 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method comprising:
forming a metal oxide device over a substrate, wherein forming the metal oxide device includes: forming a first and second doped regions disposed within the substrate, the first and second doped regions interfacing in a channel region, the first region underlying a first shallow trench isolation (STI) feature and the second doped region underlying a second STI feature, the first and second doped regions being doped with a first type dopant, the first doped region having a different concentration of dopant than the second doped region; and forming a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions, the source region being formed within the first doped region and the drain region being formed within the second doped region, the source and drain regions being doped with a second type dopant, the second type dopant being complementary to the first type dopant. |
地址 |
Hsin-Chu TW |