Semiconductor structure and method for manufacturing the same

摘要

The present invention provides a method for manufacturing a semiconductor structure, which comprises: providing an SOI substrate, forming a gate structure on the SOI substrate; etching an SOI layer of the SOI substrate and a BOX layer of the SOI substrate on both sides of the gate structure to form trenches, the trenches exposing the BOX layer and extending partly into the BOX layer; forming sidewall spacers on sidewalls of the trenches; forming inside the trenches a metal layer covering the sidewall spacers, wherein the metal layer is in contact with the SOI layer which is under the gate structure. Accordingly, the present invention further provides a semiconductor structure formed according to aforesaid method. The manufacturing method and the semiconductor structure according to the present invention make it possible to reduce capacitance between a metal layer and a body silicon layer of an SOI substrate when a semiconductor device is in operation, which is therefore favorable for enhancing performance of the semiconductor device.

主权项

1. A method for manufacturing a semiconductor structure, which comprises:
a) providing an SOI substrate, and forming a gate structure (200) on the SOI substrate; b) etching an SOI layer (100) of the SOI substrate and a BOX layer (110) of the SOI substrate on both sides of the gate structure (200) to form trenches (140), the trenches exposing the BOX layer (110) and extending partly into the BOX layer (110); c) forming sidewall spacers (160) on sidewalls of the trenches (140); and d) forming inside the trenches (140) a metal layer (150) covering the sidewall spacers (160), wherein the metal layer (150) is in contact with the SOI layer (100) which is under the gate structure (200).