Nonvolatile semiconductor memory device and control method thereof

摘要

A semiconductor memory device of this embodiment comprises: a plurality of memory chips each including a plurality of memory cells; and a controller that controls the plurality of memory chips. The controller transmits to any of the plurality of memory chips a drive instruction command instructing an operation. The drive instruction command is transmitted sequentially to the plurality of memory chips with at least a first time interval. Each of the plurality of memory chips, when the memory chip itself is in a standby state of waiting for an instruction for one operation execution of an operation loop for a certain operation, starts the operation of the operation loop in response to the drive instruction command, while when the memory chip itself is in operation execution of the operation loop, ignores the drive instruction command.

主权项

1. A semiconductor memory device, comprising:
a plurality of memory chips each including a plurality of memory cells; and a controller that controls the plurality of memory chips, the controller being configured to transmit to any of the plurality of memory chips a drive instruction command instructing an operation, the drive instruction command being transmitted sequentially to the plurality of memory chips with at least a first time interval, and each of the plurality of memory chips being configured to, when the memory chip itself is in a standby state of waiting for an instruction for one operation execution of an operational loop for a certain operation, starts the operation of the operational loop in response to the drive instruction command, while when the memory chip itself is in operation execution of the operational loop, ignores the drive instruction command.