| 摘要 |
<p>To solve the problem, the present invention provides a linear source of a thin film deposition apparatus capable of depositing a quality thin film by minimizing particles when a thin film is formed on a substrate by using an atomic layer deposition (ALD) process. In the thin film deposition apparatus and a linear source used therein according to the present invention, in order to jet a reaction gas in a plasma state, the reaction gas is plasma-gasified by an inductively coupled plasma (ICP) scheme to jet the reaction gas in a stable plasma state, thus forming a quality thin film.</p> |
