Magnetic tunnel junction structure

摘要

Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

主权项

1. A thermally-assisted magnetic tunnel junction structure, comprising:
a magnetic tunnel junction; and a thermal barrier coupled to the magnetic tunnel junction, wherein the thermal barrier comprises a cermet material that comprises a ceramic component and a metallic component, the metallic component having a long range order that is no greater than 100 angstroms in the thermal barrier.