FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes the steps of: forming a trench on a substrate; forming an insulation film pattern in the trench; depositing an amorphous material on the insulation film pattern and the substrate; flattening the amorphous material; removing a part of the amorphous material on a region with the trench; crystallizing the amorphous material into a single crystalline material; and flattening the single crystalline material.