Semiconductor device manufacturing method

摘要

A semiconductor device manufacturing method allows stably forming a plating layer at low cost on one main surface side of a substrate, while preventing unintended plating layer deposition on the other main surface side. Emitter and collector electrodes are respectively formed on the front and back surfaces of a semiconductor substrate. A first film is attached to the back surface. A notch portion of the substrate is filled with a resin member. A second film is attached to an outer peripheral portion of the substrate, straddling the substrate from the front surface to the back surface. The first and second films push out air remaining between the first and second films and the substrate. An electroless plating process is carried out while the first and second films are attached to the substrate, thereby sequentially forming a nickel plating layer and a gold plating layer on the front surface side.

主权项

1. A semiconductor device manufacturing method whereby a plating layer is formed using a plating process on one main surface side of a semiconductor substrate, the method comprising:
forming a first electrode on one main surface side of the semiconductor substrate and forming a second electrode on the other main surface side of the semiconductor substrate; attaching a first film to the other main surface of the semiconductor substrate after the forming the first and second electrode in order to prevent a deposition of the plating layer on the second electrode when carrying out the plating process; attaching a second film to an outer peripheral portion of the semiconductor substrate after the attaching the first film in order to prevent a deposition of the plating layer on the outer peripheral portion of the semiconductor substrate when carrying out the plating process; and forming the plating layer in contact with the first electrode on the one main surface side of the semiconductor substrate using the plating process after the attaching the second film.