发明名称 |
Wrap around stressor formation |
摘要 |
For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain. |
申请公布号 |
US8906768(B2) |
申请公布日期 |
2014.12.09 |
申请号 |
US201313840692 |
申请日期 |
2013.03.15 |
申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Wong Hoong Shing;Chi Min-hwa |
分类号 |
H01L29/775;H01L29/66;H01L29/78 |
主分类号 |
H01L29/775 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. ;Blasiak George S. |
主权项 |
1. A method comprising:
performing selective epitaxial growth (SEG) on one or more of a source or drain defined on a fin extending from a bulk silicon substrate of a FINFET semiconductor device; with the fin remaining connected to the bulk silicon substrate at an area of a channel connecting the source and drain, separating the fin from the bulk silicon substrate at one or more of the source or drain; and further performing SEG on one or more of the source or drain to form a wrap around epitaxial growth stressor that stresses the channel connecting the source and drain. |
地址 |
Grand Cayman KY |