| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve overlay accuracy in a main body pattern within a main body chip area in a lithography step.SOLUTION: Within a main body chip area of a mask MSKS of a processing layer which is exposed before a layer to be aligned, a CMP dummy area DAS is provided for disposing a plurality of CMP dummies DP therein and within a main body chip area of a mask MSKG to be used for exposing the layer to be aligned, a CMP dummy area DAG is provided in which an alignment mark AMG and the plurality of CMP dummies DP are disposed. The alignment mark AMG is disposed in an overlap area DAD extracted from the CMP dummy area DAS of the mask MSKS of the processing layer which is exposed before the layer to be aligned, and the CMP dummy area DAG of the mask MSKG of the layer to be aligned. In the mask MSKS of the processing layer which is exposed before the layer to be aligned, no CMP dummy DP is disposed at a position corresponding to the alignment mark AMG.</p> |
