发明名称 AVALANCHE PHOTODIODE
摘要 PROBLEM TO BE SOLVED: To enable a high-frequency electrical signal to be extracted with lower image multiplication factor.SOLUTION: An avalanche photodiode comprises a first field control layer 105 and a second field control layer 106, which are formed between a second contact layer 103 and an avalanche layer 104, and composed of group III-V compound semiconductor, and have a second conductivity type. The second field control layer 106 has smaller bandgap energy in comparison with the first field control layer 105.
申请公布号 JP2014229808(A) 申请公布日期 2014.12.08
申请号 JP20130109600 申请日期 2013.05.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 NADA MASAHIRO;MURAMOTO YOSHIFUMI;YOKOYAMA HARUKI;MATSUZAKI HIDEAKI;ISHIBASHI TADAO
分类号 H01L31/107 主分类号 H01L31/107
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