| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the size of a chip on which an LDMOS and an ESD protection element connected to the LDMOS are formed.SOLUTION: A transistor Q1 is formed in a p-type region PR. A protection element ESD is formed in an n-type region NR. A p-type sinker layer PSK is formed so as to surround the p-type region PR and the n-type region NR without partitioning the p-type region PR and the n-type region NR in a plan view.</p> |
