发明名称 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element capable of improving reliability, and a method for manufacturing the same.SOLUTION: A method for manufacturing a semiconductor element comprises the steps of: forming a material film on a substrate; performing a selective oxidation step which forms a capping oxide film on a first surface of the material film but does not oxidize a second surface of the material film; and forming a material pattern by etching the material film through the second surface of the material film. When the material film is etched, an etching rate of the capping oxide film is smaller than an etching rate of the material film.
申请公布号 JP2014229906(A) 申请公布日期 2014.12.08
申请号 JP20140105321 申请日期 2014.05.21
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHUNG SUNG YOON;BAE JIN HYE;KWON HYUNG JOON;PARK JONG CHUL;LEE WON-JUN
分类号 H01L21/8246;H01L21/306;H01L27/105;H01L29/82;H01L43/08;H01L43/12;H01L45/00;H01L49/00 主分类号 H01L21/8246
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