发明名称 PROCESSING METHOD OF SEMICONDUCTOR MATERIAL, AND LASER PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a processing method of semiconductor material and a laser processing device, capable of high-accuracy precision machining of semiconductor material which cannot be performed by RIE or dicer.SOLUTION: A processing method for applying a laser beam 30 to a semiconductor material 10 to process the semiconductor material 10, includes: a process in which such a state that a fluid substance 20 having high absorptivity for wavelength of the laser beam 30 to be applied is brought into contact with a processing object surface of the semiconductor material 10 is provided; and a process in which pulse-irradiation of the laser beam 30 is performed from the back surface side of the processing object surface of the semiconductor material 10 to perform the processing to the processing object surface of the semiconductor material 10. Therein, wavelengths of the laser beam 30 are configured so as to exclude a light absorption band of the semiconductor material 10. Thereby, processing damage such as cracking and chipping of a groove lateral surface can be suppressed and a yield of a semiconductor element such as an LED can be improved.
申请公布号 JP2014226685(A) 申请公布日期 2014.12.08
申请号 JP20130107523 申请日期 2013.05.21
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;NICHIA CHEM IND LTD 发明人 NIINO HIROYUKI;SATO MASAYASU;NARASAKI AIKO;MARUTANI YUKITOSHI
分类号 B23K26/36;B23K26/00;B23K26/04;B23K26/18;H01S3/00 主分类号 B23K26/36
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