MULTI-ORIENTATION SEMICONDUCTOR DEVICES EMPLOYING DIRECTED SELF-ASSEMBLY

摘要

A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within each trench such that the lengthwise direction of the polymer lines are parallel to the lengthwise sidewalls of the trench. The patterns in the arrays of polymer lines are transferred into an underlying material layer to form arrays of patterned material structures. The arrays of patterned material structures may be arrays of semiconductor material portion, or may be arrays of gate electrodes. An array of patterned material structures may be at a non-orthogonal angle with respect to an array of underlying material portions or with respect to an array of overlying material portions to be subsequently formed.

主权项

1. A structure comprising:
a first array of line structures in a first region and a second array of line structures in a second region, wherein said first array of line structures and said second array of line structures comprise a first material; and a third array of line structures in said first region and a fourth array of line structure in said second region, wherein said third array of line structures and said second array of line structures comprise a second material different from said first material and overlie, or underlie, said first array of line structures and said second array of line structures, respectively, wherein each line structure in said first array of line structures extends along a first direction and each line structure in said second array of line structures extends along a second direction that is not parallel to, and is not perpendicular to, said first direction, and said first array of line structures and said second array of line structures have a same uniform width throughout, and wherein each line structure within said third and fourth arrays of line structures extends along a third direction that is different from said first direction and said second direction.