SEMICONDUCTOR DEVICE

摘要

A semiconductor substrate (20) has an element section (20E) and a termination section (20T) positioned outside of the element section (20E). A first electrode layer (40) is disposed on a first surface (P1) of the semiconductor substrate (20). A second electrode layer (50) is disposed on the element section (20E) on a second surface (P2) of the semiconductor substrate (20). An interlayer insulating film (60) is disposed on the second surface (P2) of the semiconductor substrate (20). The interlayer insulating film (60) comprises: an element insulating section that provides insulation between part of the element section (20E) of the semiconductor substrate (20) and the second electrode layer (50); and a termination insulating section that covers the termination section (20T) of the semiconductor substrate (20). The termination insulating section includes a high-dielectric-constant film (62) having a higher dielectric constant than the dielectric constant of the element insulating section.