发明名称 FILM FORMING APPARATUS, FILM FORMING METHOD AND NON-TRANSITORY STORAGE MEDIUM
摘要 A film forming apparatus includes a first supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure, a second supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure, a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel, a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism, and a switching unit configured to switch exhaust destinations of the reaction vessel between the first path and the second path.
申请公布号 US2014356550(A1) 申请公布日期 2014.12.04
申请号 US201414290233 申请日期 2014.05.29
申请人 TOKYO ELECTRON LIMITED 发明人 TONEGAWA Yamato;ISHII Katsutoshi
分类号 H01J37/32;C23C16/448;C23C16/455 主分类号 H01J37/32
代理机构 代理人
主权项 1. A film forming apparatus configured to perform a film forming process on a substrate in a vacuum environment by sequentially supplying different kinds of mutually-reacting reaction gases into a reaction vessel, comprising: a first reaction gas supply unit configured to supply a first reaction gas into the reaction vessel under an environment of a first pressure; a second reaction gas supply unit configured to supply a second reaction gas into the reaction vessel under an environment of a second pressure lower than the first pressure; a first vacuum exhaust mechanism connected to the reaction vessel through a first exhaust path in order to create the environment of the first pressure within the reaction vessel; a second vacuum exhaust mechanism connected to the reaction vessel through a second exhaust path in order to create the environment of the second pressure within the reaction vessel, the second vacuum exhaust mechanism being lower in an operation pressure zone than the first vacuum exhaust mechanism; and a switching unit configured to switch exhaust destinations of the reaction vessel between the first exhaust path and the second exhaust path.
地址 Tokyo JP