METHOD OF MAKING A SEMICONDUCTOR DEVICE USING SACRIFICIAL FINS

摘要

A method of making a semiconductor device includes forming a sacrificial layer above a semiconductor layer. Portions of the sacrificial layer are selectively removed to define a first set of spaced apart sacrificial fins over a first region of the semiconductor layer, and a second set of spaced apart sacrificial fins over a second region of the semiconductor layer. An isolation trench is formed in the semiconductor layer between the first and second regions. The isolation trench and spaces are filled with a dielectric material. The first and second sets of sacrificial fins are removed to define respective first and second sets of fin openings. The first set of fin openings is filled to define a first set of semiconductor fins for a first conductivity-type transistor, and the second set of fin openings is filled to define a second set of semiconductor fins for a second conductivity-type transistor.

主权项

1. A method of making a semiconductor device comprising:
forming a sacrificial layer above a semiconductor layer, the semiconductor layer comprising a first region for a first conductivity-type transistor and a second region laterally adjacent the first region for a second conductivity-type transistor; selectively removing portions of the sacrificial layer to define a first set of spaced apart sacrificial fins over the first region, and a second set of spaced apart sacrificial fins over the second region; forming an isolation trench in the semiconductor layer between the first and second regions; filling, with a dielectric material, the isolation trench and spaces between adjacent ones of the first and second sets of spaced apart sacrificial fins; removing the first and second sets of sacrificial fins to define respective first and second sets of fin openings; and filling the first set of fin openings to define a first set of semiconductor fins for the first conductivity-type transistor, and filling the second set of fin openings to define a second set of semiconductor fins for the second conductivity-type transistor.