发明名称 |
RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE |
摘要 |
A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate. |
申请公布号 |
US2014355630(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201314370997 |
申请日期 |
2013.03.08 |
申请人 |
Japan Science and Technology Agency |
发明人 |
Takahashi Yasushi;Inui Yoshitaka;Asano Takashi;Noda Susumu;Chihara Masahiro |
分类号 |
G02B6/122;G02B6/13;H01S3/30 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
1. A Raman scattered light enhancement device comprising:
a waveguide provided in a photonic crystal made of a semiconductor substrate in which holes are formed, the waveguide having resonant modes with respect to incident light at a plurality of frequencies;wherein:
a difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate; and a waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate. |
地址 |
Kawaguchi-shi, Saitama JP |