发明名称 RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE
摘要 A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.
申请公布号 US2014355630(A1) 申请公布日期 2014.12.04
申请号 US201314370997 申请日期 2013.03.08
申请人 Japan Science and Technology Agency 发明人 Takahashi Yasushi;Inui Yoshitaka;Asano Takashi;Noda Susumu;Chihara Masahiro
分类号 G02B6/122;G02B6/13;H01S3/30 主分类号 G02B6/122
代理机构 代理人
主权项 1. A Raman scattered light enhancement device comprising: a waveguide provided in a photonic crystal made of a semiconductor substrate in which holes are formed, the waveguide having resonant modes with respect to incident light at a plurality of frequencies;wherein: a difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate; and a waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.
地址 Kawaguchi-shi, Saitama JP