发明名称 PLASMA IRRADIATION DEVICE AND PLASMA PROCESSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method capable of uniformly radiating high density plasma.SOLUTION: A height adjustment mechanism 4 is provided which is a mechanism for bringing a plasma generation device 3 and a processing object 1 into contact with each other, directly or indirectly without fixing at least one of the plasma processing device 3 and the processing object 1 to keep a gap between them constant, and a universal joint 5 is also provided. Even when the processing object 1 is rolled and pitched by a belt conveyor 2, the gap between the plasma generation device 3 and the processing object 1 can be kept.</p>
申请公布号 JP2014225367(A) 申请公布日期 2014.12.04
申请号 JP20130103726 申请日期 2013.05.16
申请人 MIYAHARA SHUICHI;OKINO AKITOSHI 发明人 MIYAHARA SHUICHI;OKINO AKITOSHI
分类号 H05H1/24 主分类号 H05H1/24
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