发明名称 TUNNEL MAGNETO-RESISTANCE ELEMENT MANUFACTURING APPARATUS
摘要 The present invention provides a TMR element manufacturing apparatus capable of reducing contamination of impurities in magnetic films. According to an embodiment of the present invention, a tunnel magneto-resistance element manufacturing apparatus includes: a load lock device to load and unload a substrate from and to an outside; a first substrate transfer device that is connected to the load lock device, at least one substrate process device being connected to the first substrate transfer device; a first evacuation unit provided in the first substrate transfer device; a second substrate transfer device that is connected to the first substrate transfer device, multiple substrate process devices being connected to the second substrate transfer device; and a second evacuation unit provided in the second substrate transfer device. At least one of the multiple substrate process devices connected to the second substrate transfer device is an oxidation device.
申请公布号 US2014353149(A1) 申请公布日期 2014.12.04
申请号 US201414462860 申请日期 2014.08.19
申请人 CANON ANELVA CORPORATION 发明人 SEINO Takuya;NISHIMURA Kazumasa;TSUNEKAWA Koji;WATANABE Eisaku;KANEKO Shigeo
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项 1. A tunnel magneto-resistance element manufacturing apparatus comprising: a load lock device configured to load and unload a substrate from and to an outside; a first substrate transfer device that is connected to the load lock device, at least one substrate process device being connected to the first substrate transfer device; a first evacuation device provided in the first substrate transfer device; and a second substrate transfer device that is connected to the first substrate transfer device, a plurality of substrate process devices being connected to the second substrate transfer device; and a second evacuation device provided in the second substrate transfer device, wherein at least one of the plurality of substrate process devices connected to the second substrate transfer device is an oxidation device.
地址 Kawasaki-shi JP
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