| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor with an oxide semiconductor thin film, which causes a smaller change in threshold voltage in response to light, a bias stress and the like and therefore, has good stress resistance.SOLUTION: The thin film transistor comprises: a gate electrode; a single oxide semiconductor layer used for a channel layer; an etch stopper layer for protecting a surface of the oxide semiconductor layer; a source-drain electrode; and a gate insulation film arranged between the gate electrode and the channel layer. Metal elements constituting the oxide semiconductor layer are metal elements such as In, Zn and Sn, and a hydrogen concentration in the gate insulation film in direct contact with the oxide semiconductor layer is set equal to or less than 4 at%. |
