SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

First sidewalls are provided on side surfaces of a gate electrode and on regions of a semiconductor substrate which are located on lateral sides of the gate electrode, second sidewalls are provided on the first sidewalls and each second sidewall has a height and a width respectively smaller than a height and a width of the first sidewall, outer sidewalls are provided outside the second sidewalls to cover the second sidewalls, and source and drain regions are provided in regions located on lateral sides of the outer sidewalls. The second sidewalls have a composition containing an atom causing a defect level due to a collision ion being implanted, and the first sidewalls and the third sidewalls have compositions containing no atom causing the defect level.

主权项

1. A semiconductor device comprising:
a semiconductor layer, a gate electrode provided on a gate insulating film on the semiconductor layer; first sidewalls selectively provided on side surfaces of the gate electrode and on regions of the semiconductor layer which are located on lateral sides of the gate electrode; second sidewalls provided on the first sidewalls to face the gate electrode and each having a height and a width respectively smaller than a height and a width of the first sidewall; third sidewalls provided outside the first sidewalls to cover the second sidewalls; and source and drain regions formed in regions of the semiconductor layer which are located on lateral sides of the third sidewalls, wherein the second sidewalls have a composition containing an atom causing a defect level due to a collision ion being implanted, the second sidewalls do not contain the collision ion, and the first sidewalls and the third sidewalls have compositions containing no atom causing the defect level.