| 发明名称 |
LENGTH-OF-DIFFUSION PROTECTED CIRCUIT AND METHOD OF DESIGN |
| 摘要 |
A circuit includes a pulsed-latch circuit. The pulsed-latch circuit includes a first plurality of transistors. One or more of the first plurality of transistors is length-of-diffusion (LOD) protected. |
| 申请公布号 |
US2014354338(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313905052 |
申请日期 |
2013.05.29 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Bellur Kashyap Ramachandra;Chintarlapalli Reddy HariKrishna;Saint-Laurent Martin;Kamal Pratyush;Patel Prayag Bhanubhai;Terzioglu Esin |
| 分类号 |
H03K3/037;G06F17/50 |
主分类号 |
H03K3/037 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A circuit comprising:
a pulsed-latch circuit including a first plurality of transistors, wherein one or more of the first plurality of transistors is length-of-diffusion (LOD) protected. |
| 地址 |
San Diego CA US |
