SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve electrical characteristics in a semiconductor device using an oxide semiconductor; and manufacture a semiconductor device which has less variability in electrical characteristics and high reliability.SOLUTION: A transistor using an oxynitride insulation film which serves as a base insulation film and provided in contact with the oxynitride insulation film includes an oxide semiconductor film which contacts the oxynitride insulation film which serves as the base insulation film. Further, regarding the oxynitride insulation film, a sum of an emission amount of a gas which is emitted by a heat treatment and has a mass-to-charge ratio of 30 and twice the emission amount of a gas having a mass-to-charge ratio of 32 is not less than 5×10/cmand not more than 5×10/cm, or not less than 5×10/cmand not more than 3×10/cm.