SIMULATION METHOD AND SIMULATION DEVICE FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for simulating a current collapse phenomenon occurring in a transistor composed of a group-III nitride semiconductor, and to provide a parameter extraction method.SOLUTION: There is provided a simulation method for a semiconductor device. The semiconductor device comprises: a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer and having a forbidden band width larger than that of the first semiconductor layer; a first source electrode and a second source electrode formed on the second semiconductor layer separately from each other; a first gate electrode and a second gate electrode formed on the second semiconductor layer; and a protection film formed on the second semiconductor layer so that at least a part of each of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode, is exposed.