| 摘要 |
Disclosed herein are CIGS-based photon-absorbing layers disposed on a substrate. The photon-absorbing layers are useful in photovoltaic devices. The photon absorbing-layer is made of a semiconductor material having empirical formula AB1-xB'xC2-yC'y, where A is Cu, Zn, Ag or Cd; B and B' are independently A1, In or Ga; C and C' are independently S, or Se, and wherein 0 ≤ x ≤ 1; and 0 ≤ y ≤ 2. The grain size of the semiconductor material and the composition of the semiconductor material both vary as a function of depth across the layer. The layers described herein exhibit improved photovoltaic properties, including increased shunt resistance and decreased backside charge carrier recombination. |
