发明名称 SPUTTERING TARGET
摘要 <p>In this sputtering target, which is rectangular as a whole, a target portion at the center is provided with a flat sputter surface, and target portions at both the ends are provided with tilted sputter surfaces, respectively. The sputtering target is characterized in that the maximum thickness of the target portions at both the ends is more than the thickness of the target portion at the center, and that the sputter surfaces of the target portions at both the ends are respectively provided with the tilted surface tilted at an angle (a) in the downward direction from the portion having the maximum thickness toward the target center, and the tilted surface tilted at an angle (ß), said surface facing the tilted surface at the angle (a). The target having a high use efficiency and excellent film uniformity (film thickness uniformity) in the whole sputter life is provided.</p>
申请公布号 KR20140139140(A) 申请公布日期 2014.12.04
申请号 KR20147032438 申请日期 2011.08.04
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 KUMAHARA YOSHIKAZU
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址
您可能感兴趣的专利