发明名称 |
SPUTTERING TARGET, AND HIGH-RESISTANCE TRANSPARENT FILM AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>The purpose of the present invention is to provide: a sputtering target which enables the production of a high-resistance transparent film even by DC sputtering; a high-resistance transparent film; and a method for producing the high-resistance transparent film. The sputtering target comprises a sintered oxide compact that contains zinc oxide as the main component and has such a component composition that at least one element selected from the element group consisting of In, Ga, Al and B is contained in an amount of 0.005 to 0.1 at.% relative to the total amount of the metal components, wherein the sintered oxide compact has a density of 5.3 g/cm3 or more. The high-resistance transparent film is produced by the DC sputtering using the sputtering target and has a volume resistivity of 1×104 Omega·cm or more.</p> |
申请公布号 |
KR20140138614(A) |
申请公布日期 |
2014.12.04 |
申请号 |
KR20147021430 |
申请日期 |
2013.03.01 |
申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
ZHANG SHOUBIN;KONDOU YUICHI;MORI RIE;YAMAGUCHI GOU |
分类号 |
C23C14/34;C04B35/453;C23C14/08 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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