发明名称 Adaptive Operation of Three Dimensional Memory
摘要 When data from a portion of a three dimensional NAND memory array is determined to be uncorrectable by Error Correction Code (ECC), a determination is made as to whether data is uncorrectable by ECC throughout some unit that is larger than the portion. If modified read conditions provide ECC correctable data, the modified read conditions are recorded for subsequent reads of the larger unit.
申请公布号 US2014355345(A1) 申请公布日期 2014.12.04
申请号 US201414281404 申请日期 2014.05.19
申请人 SanDisk Technologies Inc. 发明人 Avila Chris;Dusija Gautam;Chen Jian;Dong Yingda;Mui Man;Lee Seungpil;Mak Alex
分类号 G11C16/34;G11C29/04 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method of operating a three dimensional nonvolatile NAND memory formed as multiple physical levels of memory cells disposed above a substrate comprising: applying a first set of read conditions to a first portion of a block of the three dimensional nonvolatile NAND memory to obtain first data; performing Error Correction Code (ECC) decoding of the first data; determining that the first data is uncorrectable by ECC; in response to determining that the first data in the first portion of the block is uncorrectable by ECC, determining whether a larger unit within the three dimensional nonvolatile NAND memory, that is larger than the first portion of the block, is uncorrectable by ECC when read using the first set of read conditions, the larger unit consisting of: (i) a plurality of blocks, including the block, that share block select circuits, (ii) the block, or (iii) a set of strings within the block that are selected together by a common select line; if the stored data is uncorrectable by ECC throughout the larger unit, then applying modified read conditions to the first portion of the block to find a second set of read conditions that provide second data that is correctable by ECC; and returning corrected second data and recording the second set of read conditions for subsequent reads of data of the larger unit.
地址 Plano TX US
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