| 摘要 |
A method and a system for applying power to a target plasma chamber are disclosed. The method includes the steps of: characterizing a no plasma performance slope of the target plasma chamber; and applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe including a selected power set point value, wherein applying the selected plasma recipe includes monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated by comparing the reference chamber and the target chamber and using as inputs the no plasma performance slope of the target chamber, the no plasma performance slope of the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, and the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber. |
