| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of simultaneously performing deposition to many base materials and performing stable deposition without causing instability of operation due to deposition of an insulating film even when used for a long period of time. SOLUTION: The plasma CVD apparatus 1 includes: an evacuation means 3 for evacuating the inside of a vacuum chamber 2; a plurality of rotating holding parts 4 for holding a base material which is a film deposition object in a rotating state; a revolving mechanism for causing the plurality of rotating holding parts 4 to revolve around a revolution axis Q parallel to the rotation axes of each rotating holding part 4; a gas supply part 9 for supplying a source gas into the vacuum chamber 2; and a plasma generation power source 10 for generating plasma inside the vacuum chamber 2. Each of the plurality of rotating holding parts 4 is divided into a first group 18 connected to one pole of the plasma generation power source 10 and a second group 19 connected to the other pole of the plasma generation power source 10. The plasma can be generated between the base material of the first group 18 and the base material of the second group 19, which are made to be different polarity with each other. COPYRIGHT: (C)2013,JPO&INPIT |
