发明名称 光電変換装置
摘要 It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.
申请公布号 JP5634320(B2) 申请公布日期 2014.12.03
申请号 JP20110094863 申请日期 2011.04.21
申请人 株式会社半導体エネルギー研究所 发明人 山崎 舜平;木村 肇;伊藤 良明;王丸 拓郎
分类号 H01L31/042;H01L29/786;H02M3/155 主分类号 H01L31/042
代理机构 代理人
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