| 发明名称 | Methods of forming semiconductor device structures, and related structures | ||
| 摘要 | A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described. | ||
| 申请公布号 | US8900963(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US201113287814 | 申请日期 | 2011.11.02 |
| 申请人 | Micron Technology, Inc. | 发明人 | Sills Scott E.;Millward Dan B. |
| 分类号 | H01L21/20;H01L45/00 | 主分类号 | H01L21/20 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A method of forming a semiconductor device structure, comprising: forming a block copolymer assembly comprising at least two different domains over an electrode; selectively coupling at least one metal precursor to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain; and annealing the metal-complexed block copolymer assembly to form at least one metal structure over the electrode. | ||
| 地址 | Boise ID US | ||