发明名称 |
Three-dimensional semiconductor image reconstruction apparatus and method |
摘要 |
A method comprises directing an electron beam toward a sidewall of a three-dimensional region of a semiconductor device with a tilting angle and a first azimuth angle, detecting a first projection distance of the sidewall through a detector placed over the semiconductor device, directing the electron beam toward the sidewall with the tilting angle and a second azimuth angle, detecting a second projection distance of the sidewall, calculating a height of the three-dimensional region using a first function, wherein the first function includes the first tilting angle, the first azimuth angle, the second azimuth angle and the projection distance of the sidewall and calculating a sidewall edge of the three-dimensional region using a second function, wherein the second function includes the first azimuth angle, the second azimuth angle and the projection distance of the sidewall. |
申请公布号 |
US8901492(B1) |
申请公布日期 |
2014.12.02 |
申请号 |
US201314015383 |
申请日期 |
2013.08.30 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Cheng Wen-Hao;Nandoriya Ajay;Fu Chung-Min;Tu Chih-Chiang |
分类号 |
G01N23/203;H01J37/28 |
主分类号 |
G01N23/203 |
代理机构 |
Slater & Matsil, LLP |
代理人 |
Slater & Matsil, LLP |
主权项 |
1. A method comprising:
directing an electron beam toward a sidewall of a three-dimensional region of a semiconductor device with a tilting angle and a first azimuth angle; detecting a first projection distance of the sidewall through a detector placed over the semiconductor device; directing the electron beam toward the sidewall of the three-dimensional region of the semiconductor device with the tilting angle and a second azimuth angle; detecting a second projection distance of the sidewall through the detector placed over the semiconductor device; calculating a height of the three-dimensional region using a first function, wherein the first function includes the first tilting angle, the first azimuth angle, the second azimuth angle and the projection distance of the sidewall; and calculating a sidewall edge of the three-dimensional region using a second function, wherein the second function includes the first azimuth angle, the second azimuth angle and the projection distance of the sidewall. |
地址 |
Hsin-Chu TW |