发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n− type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n− type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate. |
申请公布号 |
US8901572(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201314104974 |
申请日期 |
2013.12.12 |
申请人 |
Hyundai Motor Company |
发明人 |
Lee Jong Seok;Hong Kyoung-Kook;Chun Dae Hwan;Jung Youngkyun |
分类号 |
H01L21/00;H01L29/78;H01L29/10;H01L29/66 |
主分类号 |
H01L21/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A semiconductor device comprising:
an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n− type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n− type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate opposite the first surface, wherein a first p type pillar region of the plurality of p type pillar regions is disposed within the n− type epitaxial layer, and the n type pillar regions and the p type pillar regions are spaced apart from the trench, and are not disposed in an area corresponding to the bottom of the trench. |
地址 |
Seoul KR |