发明名称 |
Solid-state memory management |
摘要 |
An exemplary method includes performing flash memory operations; receiving a signal from a voltage monitor as being associated with the performed flash memory operations; and, based at least in part on the received signal, setting a limit for performing subsequent flash memory operations. In such a method, the limit can act to avoid resetting flash memory responsive to current demand associated with subsequent flash memory operations. Various other apparatuses, systems, methods, etc., are also disclosed. |
申请公布号 |
US8904085(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201012687394 |
申请日期 |
2010.01.14 |
申请人 |
Lenovo (Singapore) Pte. Ltd. |
发明人 |
Hobbet Jeffrey R.;Sugawara Takashi |
分类号 |
G06F12/00;G06F1/28;G11C16/30 |
主分类号 |
G06F12/00 |
代理机构 |
|
代理人 |
Pangrle Brian J. |
主权项 |
1. A method comprising:
receiving electrical power from a host device to power a flash memory controller that comprises a voltage monitor and memory and that controls flash memory; storing data received from the host device in the memory; performing concurrent multi-channel flash memory controller operations that comprise concurrent multi-channel flash memory controller operations for writing the data from the memory to the flash memory; receiving a signal from the voltage monitor as being associated with the performed concurrent multi-channel flash memory controller operations and the received electrical power from the host device; and based at least in part on the received signal, setting a flash memory controller limit for performing subsequent concurrent multi-channel flash memory controller operations wherein the limit is set to avoid resetting of the flash memory responsive to current demand for performing the subsequent concurrent multi-channel flash memory controller operations. |
地址 |
Singapore SG |