发明名称 Solid-state memory management
摘要 An exemplary method includes performing flash memory operations; receiving a signal from a voltage monitor as being associated with the performed flash memory operations; and, based at least in part on the received signal, setting a limit for performing subsequent flash memory operations. In such a method, the limit can act to avoid resetting flash memory responsive to current demand associated with subsequent flash memory operations. Various other apparatuses, systems, methods, etc., are also disclosed.
申请公布号 US8904085(B2) 申请公布日期 2014.12.02
申请号 US201012687394 申请日期 2010.01.14
申请人 Lenovo (Singapore) Pte. Ltd. 发明人 Hobbet Jeffrey R.;Sugawara Takashi
分类号 G06F12/00;G06F1/28;G11C16/30 主分类号 G06F12/00
代理机构 代理人 Pangrle Brian J.
主权项 1. A method comprising: receiving electrical power from a host device to power a flash memory controller that comprises a voltage monitor and memory and that controls flash memory; storing data received from the host device in the memory; performing concurrent multi-channel flash memory controller operations that comprise concurrent multi-channel flash memory controller operations for writing the data from the memory to the flash memory; receiving a signal from the voltage monitor as being associated with the performed concurrent multi-channel flash memory controller operations and the received electrical power from the host device; and based at least in part on the received signal, setting a flash memory controller limit for performing subsequent concurrent multi-channel flash memory controller operations wherein the limit is set to avoid resetting of the flash memory responsive to current demand for performing the subsequent concurrent multi-channel flash memory controller operations.
地址 Singapore SG