| 发明名称 | Fabrication of semiconductor device including chemical mechanical polishing | ||
| 摘要 | A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film. | ||
| 申请公布号 | US8901743(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US201313736378 | 申请日期 | 2013.01.08 |
| 申请人 | Fujitsu Semiconductor Limited | 发明人 | Saito Tomiyasu;Mise Tatsuya;Ichikawa Hiromichi;Takeuchi Tetsuya;Okuda Genshi |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L21/768;H01L23/522;H01L23/532 | 主分类号 | H01L23/48 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A method of fabricating a semiconductor device comprising: forming a first insulation film over a semiconductor substrate, said semiconductor substrate including an outer region and an inner region located at an inner side of said outer region; forming a first wiring over said first insulation film in said inner region; forming a second insulation film over said first wiring and over said first insulation film; decreasing a film thickness of said second insulation film in said inner region with regard to a film thickness of said second insulation film in said outer region; and planarizing said second insulation film after said decreasing said film thickness of said second insulation film. | ||
| 地址 | Yokohama JP | ||