发明名称 Method of producing a radiation-emitting optoelectronic component
摘要 In a method for producing a radiation-emitting optoelectronic component, a semiconductor chip is mounted by a first main area onto a carrier body and is electrically conductively connected at a first contact area to a first connection region, and a transparent electrically insulating encapsulation layer is applied to the chip and the carrier body. A first cutout in the encapsulation layer for at least partly uncovering a second contact area of the chip is produced, and a second cutout in the encapsulation layer for at least partly uncovering a second connection region of the carrier body is produced. Finally, an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body, is applied.
申请公布号 US8900894(B2) 申请公布日期 2014.12.02
申请号 US201213596842 申请日期 2012.08.28
申请人 OSRAM Opto Semiconductor GmbH 发明人 Guenther Ewald Karl Michael;Sorg Jörg Erich;Stath Norbert
分类号 H01L21/00;H01L33/62;H01L33/52;H01L23/00;H01L33/54;H01L33/50 主分类号 H01L21/00
代理机构 代理人 O'Connor Cozen
主权项 1. A method for producing an optoelectronic component which emits radiation in a main radiation direction, comprising a semiconductor chip having a first main area, a first contact area and a second main area, opposite the first main area, with a second contact area, and a carrier body having first and second connection regions, electrically insulated from one another, wherein the method comprises the steps of: mounting the semiconductor chip by the first main area onto the carrier body and electrically conductively connecting the first contact area to the first connection region; applying a transparent electrically insulating glass encapsulation layer to the semiconductor chip and the carrier body, application of the insulating glass encapsulation layer comprising the steps of applying a precursor layer containing inorganic and organic constituents;removing the organic constituents from the precursor layer with a first thermal treatment; anddensifying the precursor layer into a glass layer with a second thermal treatment; producing a first cutout in the glass layer for at least partly uncovering the second contact area of the semiconductor chip, and producing a second cutout in the insulating glass encapsulation layer for at least partly uncovering the second connection region of the carrier body; and applying an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body.
地址 Regensburg DE