METHOD AND APPARATUS FOR REAL-TIME MEASURING DEPOSITION THICKNESS AND UNIFORMITY DURING DEPOSITION PROCESS

摘要

The present invention relates to a method and an apparatus for measuring thickness of a deposited film. The apparatus measures the thickness of the deposited film by measuring intensity of plasma light emission generated during a plasma deposition process. The intensity of the plasma light is measured after the plasma light, generated during the deposition process, penetrates the film deposited on a substrate and a portion of the substrate. The apparatus calculates the thickness of the deposited film based on the intensity of the plasma light. Unlike the prior apparatus for measuring thickness of a deposited film, the apparatus of the present invention measures thickness of multiple spots of the deposited film at the same time and in real time during a deposition process. Therefore, uniformity of the deposited film can be monitored in real time.