| 摘要 |
A three-terminal light emitting device (LED) chip, associated fabrication method, and LED array are provided. The method forms an n-doped semiconductor layer overlying a substrate, an active semiconductor layer overlying the n-doped semiconductor layer, and a p-doped semiconductor layer overlying the active semiconductor layer. A trench is formed through the p-doped and active semiconductor layers, exposing the n-doped semiconductor layer. In one aspect, the trench is formed at least part way, but not completely, through the n-doped semiconductor layer. Then, an LED P electrode is formed overlying a first region of the p-doped semiconductor layer, a diode P electrode is formed overlying a second region of the p-doped semiconductor layer that is separated from the first region of the p-doped semiconductor layer by the trench, and an N electrode is formed overlying a top surface of the exposed n-doped semiconductor layer in the trench, shared by the LED and diode. |
