| 摘要 |
FIELD: chemistry.SUBSTANCE: heterostructure modulated-doped field-effect transistor comprises a flange, a pedestal, a heteroepitaxial structure, a buffer layer, a source, a gate, a drain and ohmic contacts. The pedestal has thickness of 30-200 mcm and is made from a heat-conducting layer of CVD polycrystalline diamond with implanted Ni and annealed surface layers on two sides. On top of the pedestal there is a substrate made from monocrystalline silicon with thickness of 10-20 mcm and a buffer layer. On the surface of the heteroepitaxial structure, between the source, the gate and the drain, there are series-arranged additional layers of heat-conducting polycrystalline diamond, a barrier layer of hafnium dioxide and a barrier layer of aluminium oxide. The barrier layers have total thickness of 1.0-4.0 nm. Furthermore, in the gate region, the buffer layers are situated under the gate, directly on the epitaxial structure in the form of a layer of a solid AlGaN solution.EFFECT: improved heat removal from the pedestal and the active region of the transistor, ensuring minimal current leakage from the gate and achieving the lowest noise factor in the GHz range.6 cl, 6 dwg |
